IRLHS2242TRPBF International Rectifier, IRLHS2242TRPBF Datasheet - Page 5

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IRLHS2242TRPBF

Manufacturer Part Number
IRLHS2242TRPBF
Description
MOSFET P-CH 20V 15A 2X2 PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLHS2242TRPBF

Input Capacitance (ciss) @ Vds
877pF @ 10V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
31 mOhm @ 8.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7.2A
Vgs(th) (max) @ Id
1.1V @ 10µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Power - Max
2.1W
Mounting Type
*
Package / Case
*
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
31 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 15 A
Power Dissipation
9.6 W
Gate Charge Qg
12 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLHS2242TRPBFTR

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Fig 14a. Unclamped Inductive Test Circuit
R
-V
-20V
Fig 12. On-Resistance vs. Gate Voltage
70
60
50
40
30
20
10
G
V DS
GS
Fig 15a. Switching Time Test Circuit
0
t p
≤ 0.1 %
≤ 1
-V GS, Gate -to -Source Voltage (V)
I AS
2
D.U.T
0.01 Ω
L
4
T J = 25°C
6
T J = 125°C
DRIVER
8
I D = -8.5A
15V
10
+
-
V DD
12
A
Fig 13. Maximum Avalanche Energy vs. Drain Current
V
10%
90%
V
IRLHS2242TR/TR2PbF
80
70
60
50
40
30
20
10
GS
DS
0
Fig 14b. Unclamped Inductive Waveforms
25
Fig 15b. Switching Time Waveforms
I
AS
Starting T J , Junction Temperature (°C)
t
d(on)
50
t
r
75
t p
TOP
BOTTOM
100
t
d(off)
V
(BR)DSS
-4.3A
-2.2A
125
I D
-8.5A
t
f
150
5

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