M38510/21002BJA QP SEMICONDUCTOR, M38510/21002BJA Datasheet - Page 52

• Manufacturer Part Number: M38510/21002BJA
• Manufacturer: QP SEMICONDUCTOR

Specifications of M38510/21002BJA

• Lead Free Status / RoHS Status: Not Compliant

Programming current
linear point
Output programming
current limits
Output programming
voltage limit
Current slew rate
Blow sense voltage
Delay to programming
ramp
Time to reach linear
point
Program sense inhibit
Time to program fuse
Programming ramp hold
time
Programming ramp fall
time 2/
1/ T
2/ Rise and fall times are from 10% to 90%.
3/ Total time V
4/ t
5/ Proceed to next address after read strobe indicates programmed cell.
and rise/fall times.
OFF
C
= +25°C
Parameter
is equal to or greater than t
CC
is on to program fuse is equal to or greater than the sum of all the specified delays, pulse widths
TABLE IVE. Programming characteristics for circuit E – Discontinued.
TABLE IVD. Programming characteristics for circuit D – Continued.
Symbol
V
I
OP(MAX)
SR
OP(MAX)
I
t
OPLP
V
t
t
t
fIOP
dBP
t
hAP
t
LP
ss
tp
PS
IOP
ON
.
Apply current ramp to
selected output
Constant after linear
point
After fuse programs
Conditions 1/
Ramp characteristics
MIL-M-38510/210E
52
155
Min
0.9
0.7
2.0
0.2
2.0
3.0
1.4
24
Recommended
Limits
160
1.0
3.0
1.0
3.0
1.5
0.1
10
25
Max
165
150
1.1
1.6
0.2
20
26
10
10
mA/µs
Unit
mA
mA
µs
µs
µs
µs
µs
µs
V
V