M38510/21002BJA QP SEMICONDUCTOR, M38510/21002BJA Datasheet - Page 7

• Manufacturer Part Number: M38510/21002BJA
• Manufacturer: QP SEMICONDUCTOR

Specifications of M38510/21002BJA

• Lead Free Status / RoHS Status: Not Compliant

follows:
point electrical parameters shall be as specified in table II herein.
given are conventional and positive when flowing into the referenced terminal.
the manufacturer’s circuit designator. The circuit designator is cross referenced in 6.5 herein with the
manufacturer’s symbol.
4.4.2 Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as
4.4.3 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. End-
4.5 Methods of inspection. Methods of inspection shall be specified and as follows:
4.5.1 Voltage and current. All voltages given are referenced to the microcircuit ground terminal. Currents
4.6
a. End-point electrical parameters shall be as specified in table II herein.
b. The steady-state life test duration, test condition, and test temperature, or approved alternatives shall
c. For qualification, at least 50 percent of the sample selected for testing in subgroup 1 shall be
Programming procedure identification. The programming procedure to be utilized shall be identified by
be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-
in test circuit shall be maintained under document control by the device manufacturer's Technology
Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring
or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and
power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-
STD-883.
programmed (see 3.3.2). For quality conformance inspection, the programmability sample (see
4.4.1c) shall be included in the subgroup 1 tests.
MIL-M-38510/210E
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