MT45W2MW16BGB-708 WT Micron Technology Inc, MT45W2MW16BGB-708 WT Datasheet - Page 32

• Manufacturer Part Number: MT45W2MW16BGB-708 WT
• Manufacturer: Micron Technology Inc

Specifications of MT45W2MW16BGB-708 WT

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Table 6:
Deep Power-Down (RCR[4]) Default = DPD Disabled
Page Mode Operation (RCR[7]) Default = Disabled
Electrical Characteristics
Table 7:
PDF: 09005aef82832fa2/Source: 09005aef82832f5f
32mb_burst_cr1_0_p24z_2.fm - Rev. E 9/08 EN
RCR[2]
0
0
0
0
1
1
1
1
RCR[1]
32Mb Address Patterns for PAR (RCR[4] = 1)
Absolute Maximum Ratings
0
0
1
1
0
0
1
1
Note:
RCR[0]
0
1
0
1
0
1
0
1
The deep power-down bit enables and disables all refresh-related activity. This mode is
used if the system does not require the storage provided by the CellularRAM device. Any
stored data will become corrupted when DPD is enabled. When refresh activity has been
reenabled, the CellularRAM device will require 150µs to perform an initialization proce-
dure before normal operations can resume.
Deep power-down is enabled when RCR[4] = 0 and remains enabled until RCR[4] is set to
“1.” DPD should not be enabled or disabled with the software access sequence; instead,
use CRE to access the RCR.
The page mode operation bit determines whether page mode is enabled for asynchro-
nous READ operations. In the power-up default state, page mode is disabled.
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
Parameter
Voltage to any ball except V
to V
Voltage on V
Voltage on V
Storage temperature (plastic)
Operating temperature (case)
Soldering temperature and time
Wireless
Industrial
10 seconds (solder ball only)
–30°C exceeds the CellularRAM Workgroup 1.0 specification of –25°C.
SS
32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
One-quarter of die
One-quarter of die
One-eighth of die
One-eighth of die
Active Section
One-half of die
One-half of die
note:
None of die
CC
CC
Full die
Q supply relative to V
supply relative to V
CC
; V
32
CC
Q relative
SS
SS
000000h–1FFFFFh
000000h–0FFFFFh
000000h–07FFFFh
000000h–03FFFFh
100000h–1FFFFFh
180000h–1FFFFFh
1C0000h–1FFFFFh
Address Space
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0
–0.5V to (4.0V or V
Electrical Characteristics
–55ºC to +150ºC
2 Meg x 16
1 Meg x 16
0 Meg x 16
1 Meg x 16
–0.2V to +2.45V
–30ºC to +85ºC
–40ºC to +85ºC
–0.2V to +4.0V
512K x 16
256K x 16
512K x 16
256K x 16
Size
©2007 Micron Technology, Inc. All rights reserved.
Rating
+260ºC
CC
less)
Q + 0.3V, whichever is
Density
32Mb
16Mb
16Mb
8Mb
4Mb
0Mb
8Mb
4Mb