MT45W2MW16BGB-708 WT Micron Technology Inc, MT45W2MW16BGB-708 WT Datasheet - Page 53

• Manufacturer Part Number: MT45W2MW16BGB-708 WT
• Manufacturer: Micron Technology Inc

Specifications of MT45W2MW16BGB-708 WT

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 42:
PDF: 09005aef82832fa2/Source: 09005aef82832f5f
32mb_burst_cr1_0_p24z_2.fm - Rev. E 9/08 EN
DQ[15:0]
LB#/UB#
A[20:0]
in/out
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
IH
IL
High-Z
Burst WRITE Followed by Burst READ
t CSP
t SP
t SP
t SP t HD
address
Valid
Notes:
t HD
t HD
High-Z
1. Nondefault BCR settings for burst WRITE followed by burst READ: latency code 2 (3 clocks);
2. When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be pro-
t CLK
WAIT active LOW; WAIT asserted during delay.
vided every
tions: clocked CE# HIGH or CE# HIGH for greater than 15ns. Note that the CellularRAM
Workgroup 1.0 specification requires CE# to be clocked HIGH to terminate the burst.
t SP
t SP
D[0]
32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
t HD
t HD
D[1]
t
CEM. A refresh opportunity is satisfied by either of the following two condi-
D[2]
D[3]
t HD
53
t CBPH
2
t CSP
t CSP
t SP
t SP
t SP t HD
V
V
address
OH
OL
Valid
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t HD
t HD
High-Z
t ABA
t ACLK
t BOE
output
Valid
t KOH
output
Valid
©2007 Micron Technology, Inc. All rights reserved.
Timing Diagrams
Don’t Care
output
Valid
output
Valid
t OHZ
Undefined
High-Z