MT45W2MW16BGB-708 WT Micron Technology Inc, MT45W2MW16BGB-708 WT Datasheet - Page 55

• Manufacturer Part Number: MT45W2MW16BGB-708 WT
• Manufacturer: Micron Technology Inc

Specifications of MT45W2MW16BGB-708 WT

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 44:
PDF: 09005aef82832fa2/Source: 09005aef82832f5f
32mb_burst_cr1_0_p24z_2.fm - Rev. E 9/08 EN
DQ[15:0]
LB#/UB#
A[20:0]
in/out
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IL
IH
IL
IH
IH
IL
IH
IL
OH
OL
IH
IL
IH
IL
IL
IH
Asynchronous WRITE Followed by Burst READ with ADV# LOW
t VPH
High-Z
t WHZ
t AS
t AVS
Notes:
t CVS
address
t VP
t CW
Valid
t WC
t WP
Data
t AVH
t DH
t WPH
t WC
1. Nondefault BCR settings for asynchronous WRITE followed by burst READ: latency code 2 (3
2. When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be pro-
t AW
clocks); WAIT active LOW; WAIT asserted during delay.
vided every
CE# HIGH or CE# HIGH for greater than 15ns. Note that the CellularRAM Workgroup 1.0
specification requires CE# to be clocked HIGH to terminate the burst.
t BW
t VS
address
t AS
t DW
Valid
Data
t WC
32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
t WR
t CKA
t
CEM. A refresh opportunity is satisfied by either of these conditions: clocked
t CBPH
2
t CSP
V
V
t SP
t CEW
t SP
address
OH
OL
t SP
t SP t HD
Valid
t HD
t HD
t CLK
High-Z
55
t ABA
t ACLK
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t BOE
output
Valid
t KOH
output
Valid
Don’t Care
output
©2007 Micron Technology, Inc. All rights reserved.
Valid
Timing Diagrams
output
Valid
t OHZ
Undefined
High-Z