MT45W8MW16BGX-856 WT TR Micron Technology Inc, MT45W8MW16BGX-856 WT TR Datasheet - Page 34

• Manufacturer Part Number: MT45W8MW16BGX-856 WT TR
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-856 WT TR

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Table 10:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
Description
Operating Current
Supply voltage
I/O supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Output leakage current
Asynchronous random
READ/WRITE
Asynchronous PAGE
READ
Initial access, burst
READ/WRITE
Continuous burst READ
Continuous burst WRITE
Standby current
Electrical Characteristics and Operating Conditions
Wireless temperature (–30ºC < T
Notes:
V
V
1. The 3.6V I/O exceeds the CellularRAM 1.5 Workgroup specification of 1.95V.
2. Input signals may overshoot to V
3. Input signals may undershoot to V
4. BCR[5:4] = 01b (default setting of one-half drive strength).
5. This parameter is specified with the outputs disabled to avoid external loading effects.
6. Micron devices are fully compatible with the CellularRAM Workgroup specification for
7. I
8. I
9. I
V
IN
IN
chip enabled,
I
chip disabled
I
IN
OE# = V
Conditions
Conditions
OH
OL
CE# = V
The user must add the current required to drive output capacitance expected in the actual
system.
I
low standby current, all inputs must be driven to either V
higher for up to 500ms after power-up or when entering standby mode.
characterization and is not 100-percent tested.
= V
= V
CC
SB
SB
CC
= 0 to V
I
OUT
= +0.2mA
= –0.2mA
1P: –70 max of 18; –85 max of 15.
1P specifications are less than the CR1.5 limits of 18mA and 15mA.
(MAX) values measured with PAR set to FULL ARRAY and at +85°C. In order to achieve
(TYP) is the average I
CC
CC
Q or 0V
Q or 0V
= 0
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
IH
CC
CC
or
Q
Q
C
< +85ºC); Industrial temperature (–40ºC < T
I
V
I
I
CC
V
I
CC
I
CC
V
V
V
V
I
CC
CC
I
CC
I
LO
SB
OH
OL
LI
CC
3W
IH
IL
1P
3R
1
2
Q
Symbol
Symbol
SB
at 25°C and V
Low-power
34
Standard
133 MHz
104 MHz
133 MHz
104 MHz
133 MHz
104 MHz
80 MHz
66 MHz
80 MHz
66 MHz
80 MHz
66 MHz
–70
–85
–70
–85
(L)
CC
SS
Q + 1.0V for periods less than 2ns during transitions.
- 1.0V for periods less than 2ns during transitions.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CC
Page/Burst CellularRAM 1.5 Memory
V
0.8 V
= V
CC
Min
–0.2
Typ
Q - 0.4
1.7
1.7
50
CC
CC
Q = 1.8V. This parameter is verified during
Q
V
0.2 V
CC
CC
Max
Max
C
3.6V
1.95
Q or V
Q + 0.2
200
160
0.4
25
22
15
12
45
35
30
25
40
30
25
20
40
35
30
25
< +85ºC)
1
1
CC
©2004 Micron Technology, Inc. All rights reserved.
Q
SS
. I
SB
Unit
Unit
might be slightly
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V
V
Notes
Notes
5, 6, 9
7, 8
1
2
3
4
4
5
5
5
5