IXFQ28N60P3 IXYS, IXFQ28N60P3 Datasheet

no-image

IXFQ28N60P3

Manufacturer Part Number
IXFQ28N60P3
Description
MOSFET N-CH 600V 28A TO3P
Manufacturer
IXYS
Series
Polar3™ HiPerFET™r
Datasheet

Specifications of IXFQ28N60P3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
260 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
3560pF @ 25V
Power - Max
695W
Mounting Type
*
Package / Case
*
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
28
Rds(on), Max, Tj=25°c, (?)
0.260
Ciss, Typ, (pf)
3560
Qg, Typ, (nc)
50
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
695
Rthjc, Max, (ºc/w)
0.18
Package Style
TO-3P
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Polar3
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
sold
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TM
TO-247
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque
TO-3P
V
V
V
V
V
Test Conditions
I
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
HiperFET
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 1mA
≤ V
= 2.5mA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
, T
TM
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXFQ28N60P3
IXFH28N60P3
600
Characteristic Values
Min.
3.0
-55 ... +150
-55 ... +150
Maximum Ratings
1.13 / 10
± 30
± 40
600
600
500
695
150
300
260
Typ.
5.5
6.0
28
70
14
35
±100
Max.
Nm/lb.in.
260 mΩ
5.0
1.5 mA
25
V/ns
mJ
μA
°C
°C
°C
°C
°C
nA
W
V
V
V
V
A
A
A
V
V
g
g
V
I
R
TO-3P (IXFQ)
TO-247 ( IXFH)
G = Gate
S = Source
Features
Advantages
Applications
D25
Fast Intrinsic Rectifier
Avalanche Rated
Low R
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS(on)
DSS
G
D
G
DS(ON)
S
D
= 600V
= 28A
≤ ≤ ≤ ≤ ≤
S
and Q
Tab = Drain
D
260mΩ Ω Ω Ω Ω
G
= Drain
Tab
Tab
DS100322(03/11)

Related parts for IXFQ28N60P3

IXFQ28N60P3 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFQ28N60P3 IXFH28N60P3 Maximum Ratings 600 = 1MΩ 600 GS ± 30 ± 500 ≤ 150° 695 -55 ... +150 150 -55 ... +150 300 260 1. 5.5 6.0 Characteristic Values Min ...

Page 2

... D D25 0.5 • DSS D D25 14 0.25 Characteristic Values Min. Typ. JM 9.0 0.8 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFQ28N60P3 IXFH28N60P3 TO-3P Outline Max Ω 0.18 °C/W °C/W Max. TO-247 Outline 28 A 112 A 1.4 V 250 μC ...

Page 3

... J 3 10V GS 7V 3.0 2.6 6V 2.2 1.8 1.4 1.0 5V 0.6 0 14A Value vs 125º 25º IXFQ28N60P3 IXFH28N60P3 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - ...

Page 4

... Volts C iss C oss C rss Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 300V 14A 10mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 100 R Limit DS(on 150º 25ºC C Single Pulse 0.1 10 100 V - Volts DS IXFQ28N60P3 IXFH28N60P3 40ºC J 25ºC 125º 100µs 1ms 1,000 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.01 0.1 Pulse Width - Seconds IXFQ28N60P3 IXFH28N60P3 1 10 IXYS REF: F_28N60P3(K7)03-23-11 ...

Related keywords