IXFQ28N60P3 IXYS, IXFQ28N60P3 Datasheet - Page 5

• Manufacturer Part Number: IXFQ28N60P3
• Description: MOSFET N-CH 600V 28A TO3P
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFQ28N60P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 3560pF @ 25V
• Power - Max: 695W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 28
• Rds(on), Max, Tj=25°c, (?): 0.260
• Ciss, Typ, (pf): 3560
• Qg, Typ, (nc): 50
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 695
• Rthjc, Max, (ºc/w): 0.18
• Package Style: TO-3P
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

IXFQ28N60P3
IXFH28N60P3
Fig. 13. Maximum Transient Thermal Impedance
1
Fig. 13. Maximum Transient Thermal Impedance
AAAAA
0.3
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
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IXYS REF: F_28N60P3(K7)03-23-11