IXFQ28N60P3 IXYS, IXFQ28N60P3 Datasheet - Page 3

• Manufacturer Part Number: IXFQ28N60P3
• Description: MOSFET N-CH 600V 28A TO3P
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFQ28N60P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 3560pF @ 25V
• Power - Max: 695W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 28
• Rds(on), Max, Tj=25°c, (?): 0.260
• Ciss, Typ, (pf): 3560
• Qg, Typ, (nc): 50
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 695
• Rthjc, Max, (ºc/w): 0.18
• Package Style: TO-3P
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

© 2011 IXYS CORPORATION, All Rights Reserved
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
28
24
20
16
12
28
24
20
16
12
8
4
0
8
4
0
0
0
0
V
GS
Fig. 5. R
2
= 10V
1
Fig. 1. Output Characteristics @ T
Fig. 3. Output Characteristics @ T
10
4
DS(on)
2
20
6
Normalized to I
3
Drain Current
I
V
D
V
8
DS
- Amperes
DS
- Volts
30
4
- Volts
10
V
V
D
GS
5
GS
= 14A Value vs.
T
= 10V
12
J
40
= 10V
= 125ºC
8V
7V
7V
6V
5V
6V
J
5V
J
6
= 25ºC
= 125ºC
14
T
50
J
= 25ºC
7
16
18
60
8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
60
50
40
30
20
10
30
25
20
15
10
0
5
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
Fig. 4. R
= 10V
-25
-25
5
Fig. 6. Maximum Drain Current vs.
DS(on)
0
0
Junction Temperature
10
T
Case Temperature
T
Normalized to I
C
J
25
25
- Degrees Centigrade
- Degrees Centigrade
V
DS
V
GS
15
50
50
- Volts
= 10V
8V
6V
5V
7V
IXFQ28N60P3
IXFH28N60P3
D
75
75
= 14A Value vs.
20
I
D
= 28A
100
100
J
I
25
D
= 25ºC
= 14A
125
125
150
150
30