NB3L553DG ON Semiconductor, NB3L553DG Datasheet - Page 3

• Manufacturer Part Number: NB3L553DG
• Description: IC CLK FANOUT BUFFER 1:4 8-SOIC
• Manufacturer: ON Semiconductor
• Type: Fanout Buffer (Distribution)r

Specifications of NB3L553DG

• Number Of Circuits: 1
• Ratio - Input:output: 1:4
• Differential - Input:output: No/No
• Input: LVCMOS, LVTTL
• Output: LVCMOS, LVTTL
• Frequency - Max: 200MHz
• Voltage - Supply: 2.38 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Frequency-max: 200MHz
• Number Of Outputs: 4
• Max Input Freq: 200 MHz
• Propagation Delay (max): 5 ns @ 2.5V or 4 ns @ 5V
• Supply Voltage (max): 5.25 V
• Supply Voltage (min): 2.375 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NB3L553DG; NB3L553DGOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. JEDEC standard multilayer board − 2S2P (2 signal, 2 power)
Table 3. MAXIMUM RATINGS
Symbol
V
T
q
q
q
q
T
V
DD
stg
JA
JC
JA
JC
A
I
Positive Power Supply
Input Voltage
Operating Temperature Range,
Industrial
Storage Temperature Range
Thermal Resistance
(Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance
(Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Table 4. ATTRIBUTES
2. For additional Moisture Sensitivity information, refer to Application Note AND8003/D.
ESD Protection
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 2)
Flammability Rating
Transistor Count
Meets or Exceeds JEDEC Standard EIA/JESD78 IC Latchup Test
Parameter
Characteristic
Condition 1
GND = 0 V
500 lfpm
500 lfpm
(Note 1)
(Note 1)
http://onsemi.com
0 lfpm
0 lfpm
I
OE
CLK
−
−
Oxygen Index: 28 to 34
Charged Device Model
Human Body Model
3
Machine Model
V
DD
GND = 0 V and
= 2.375 V to 5.25 V
Condition 2
SOIC−8
SOIC−8
DFN8
DFN8
DFN8
−
−
−
UL−94 code V−0 @ 0.125 in
531 Devices
GND – 0.5 v V
> TBD kV
> 150 V
Level 1
> 2 kV
GND – 0.5 v V
Value
≥ −40 to ≤ +85
−65 to +150
41 to 44
35 to 40
Rating
190
130
129
6.0
84
I
v V
I
v 5.75
DD
+ 0.5
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
°C
°C
V
V