NB3L553DG ON Semiconductor, NB3L553DG Datasheet - Page 5

• Manufacturer Part Number: NB3L553DG
• Description: IC CLK FANOUT BUFFER 1:4 8-SOIC
• Manufacturer: ON Semiconductor
• Type: Fanout Buffer (Distribution)r

Specifications of NB3L553DG

• Number Of Circuits: 1
• Ratio - Input:output: 1:4
• Differential - Input:output: No/No
• Input: LVCMOS, LVTTL
• Output: LVCMOS, LVTTL
• Frequency - Max: 200MHz
• Voltage - Supply: 2.38 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Frequency-max: 200MHz
• Number Of Outputs: 4
• Max Input Freq: 200 MHz
• Propagation Delay (max): 5 ns @ 2.5V or 4 ns @ 5V
• Supply Voltage (max): 5.25 V
• Supply Voltage (min): 2.375 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NB3L553DG; NB3L553DGOS

3. Outputs loaded with external R
4. Measured with rail−to−rail input clock
5. Measured on rising edges at V
Table 6. AC CHARACTERISTICS; V
AC CHARACTERISTICS; V
AC CHARACTERISTICS; V
decoupling capacitor should be connected between V
Symbol
Symbol
Symbol
t
t
jitter
jitter
t
t
t
t
t
t
skew
skew
skew
skew
skew
skew
t
t
t
t
t
t
f
f
f
r
r
r
pd
pd
pd
in
/t
in
/t
in
/t
f
(f)
f
(f)
f
Input Frequency
Output rise and fall times; 0.8 V to 2.0 V
Propagation Delay, CLK to Q
Output−to−output skew; (Note 5)
Device−to−device skew, (Note 5)
Input Frequency
RMS Phase Jitter (Integrated 12 kHz −
20 MHz) (See Figures 2 and 3)
Output rise and fall times; 0.8 V to 2.0 V
Propagation Delay, CLK to Q
Output−to−output skew; (Note 5)
Device−to−device skew, (Note 5)
Input Frequency
RMS Phase Jitter (Integrated 12 kHz −
20 MHz) (See Figures 2 and 3)
Output rise and fall times; 0.8 V to 2.0 V
Propagation Delay, CLK to Q
Output−to−output skew; (Note 5)
Device−to−device skew, (Note 5)
DD
DD
Characteristic
Characteristic
DD
L
= 3.3 V +5%
= 5.0 V +5%
= 33 W series resistor and C
÷ 2 between any two outputs with equal loading.
DD
Characteristic
= 2.5 V +5%
n
n
n
(Note 4)
(Note 4)
(Note 4)
(V
(V
DD
DD
= 3.15 V to 3.45 V, GND = 0 V, T
= 4.75 V to 5.25 V, GND = 0 V, T
DD
http://onsemi.com
and GND.
(V
DD
L
= 2.375 V to 2.625 V, GND = 0 V, T
= 15 pF to GND for proper operation. Duty cycle out = duty in. A 0.01 mF
f
f
carrier
carrier
5
Conditions
= 100 MHz
= 100 MHz
Min
A
A
= −40°C to +85°C) (Note 3)
= −40°C to +85°C) (Note 3)
Min
Min
Min
2.2
2.0
1.7
−
−
−
−
−
−
−
−
−
−
−
−
−
−
A
= −40°C to +85°C) (Note 3)
Typ
Typ
Typ
1.0
3.0
0.6
2.4
0.3
2.5
35
18
35
29
35
−
−
−
−
−
−
Max
Max
Max
200
500
200
500
200
500
1.5
5.0
1.0
4.0
0.7
4.0
50
50
50
−
−
Unit
MHz
Unit
MHz
Unit
MHz
ns
ns
ps
ps
ns
ns
ps
ps
ns
ns
ps
ps
fs
fs