NB3L553DG ON Semiconductor, NB3L553DG Datasheet - Page 4

• Manufacturer Part Number: NB3L553DG
• Description: IC CLK FANOUT BUFFER 1:4 8-SOIC
• Manufacturer: ON Semiconductor
• Type: Fanout Buffer (Distribution)r

Specifications of NB3L553DG

• Number Of Circuits: 1
• Ratio - Input:output: 1:4
• Differential - Input:output: No/No
• Input: LVCMOS, LVTTL
• Output: LVCMOS, LVTTL
• Frequency - Max: 200MHz
• Voltage - Supply: 2.38 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Frequency-max: 200MHz
• Number Of Outputs: 4
• Max Input Freq: 200 MHz
• Propagation Delay (max): 5 ns @ 2.5V or 4 ns @ 5V
• Supply Voltage (max): 5.25 V
• Supply Voltage (min): 2.375 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NB3L553DG; NB3L553DGOS

Table 5. DC CHARACTERISTICS
DC CHARACTERISTICS
DC CHARACTERISTICS
V
V
V
V
V
V
Symbol
Symbol
Symbol
V
V
V
V
V
V
IH,
IL,
IH,
IL,
IH,
IL,
IH,
IH,
IH,
V
IL,
V
V
IL,
V
V
IL,
V
CIN
IOS
V
CIN
IOS
V
CIN
IOS
I
I
I
ZO
ZO
ZO
DD
DD
DD
OH
OH
OH
OH
OH
OL
OL
OL
I
I
I
I
I
I
OE
OE
OE
CLK
CLK
OE
CLK
CLK
OE
CLK
CLK
OE
Power Supply Current @ 135 MHz, No Load
Output HIGH Voltage – I
Output LOW Voltage – I
Input HIGH Voltage, I
Input LOW Voltage, I
Input HIGH Voltage, OE
Input LOW Voltage, OE
Nominal Output Impedance
Input Capacitance, I
Short Circuit Current
Power Supply Current @ 135 MHz, No Load
Output HIGH Voltage – I
Output LOW Voltage – I
Output HIGH Voltage – I
Input HIGH Voltage, I
Input LOW Voltage, I
Input HIGH Voltage, OE
Input LOW Voltage, OE
Nominal Output Impedance
Input Capacitance, OE
Short Circuit Current
Power Supply Current @ 135 MHz, − No Load
Output HIGH Voltage – I
Output LOW Voltage – I
Output HIGH Voltage – I
Input HIGH Voltage, I
Input LOW Voltage, I
Input HIGH Voltage, OE
Input LOW Voltage, OE
Nominal Output Impedance
Input Capacitance, OE
Short Circuit Current
(V
(V
DD
DD
= 3.15 V to 3.45 V, GND = 0 V, T
= 4.75 V to 5.25 V, GND = 0 V, T
CLK
CLK
CLK
CLK
CLK
CLK
CLK
(V
, OE
OL
OL
OL
OH
OH
OH
OH
OH
DD
Characteristic
Characteristic
Characteristic
= 16 mA
= 25 mA
= 35 mA
= −16 mA
= −25 mA
= −12 mA (CMOS level)
= −35 mA
= −12 mA (CMOS level)
= 2.375 V to 2.625 V, GND = 0 V, T
http://onsemi.com
A
A
4
= −40°C to +85°C) (Note 3)
= −40°C to +85°C) (Note 3)
A
= −40°C to +85°C) (Note 3)
(V
(V
(V
V
V
DD
DD
DD
DD
DD
Min
Min
Min
1.7
1.8
2.4
2.0
2.4
2.0
÷2)+0.5
÷2)+0.7
÷2) + 1
−
−
−
−
−
−
−
−
−
−
0
−
−
−
−
−
−
−
−
−
−
− 0.4
− 0.4
± 28
± 50
± 80
Typ
Typ
Typ
5.0
5.0
5.0
25
20
35
20
45
20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
(V
(V
(V
DD
DD
DD
Max
V
Max
V
Max
V
0.4
5.0
0.7
0.4
5.0
0.8
0.4
5.0
0.8
30
÷2)−0.5
40
÷2)−0.7
85
÷2) − 1
−
DD
−
−
−
−
−
DD
−
−
−
−
−
DD
−
−
−
Unit
Unit
Unit
mA
mA
mA
mA
mA
mA
pF
pF
pF
W
W
W
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V