GP2S24AB Sharp Electronics, GP2S24AB Datasheet - Page 4

GP2S24AB

Manufacturer Part Number
GP2S24AB
Description
Manufacturer
Sharp Electronics
Type
Reflectiver
Datasheet

Specifications of GP2S24AB

Number Of Elements
1
Output Device
Phototransistor
Reverse Breakdown Voltage
6V
Collector-emitter Voltage
35V
Forward Current
50mA
Package Type
PDIP
Collector Current (dc) (max)
20mA
Power Dissipation
100mW
Fall Time
100000ns
Rise Time
100000ns
Pin Count
4
Mounting
Through Hole
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
■ Absolute Maximum Ratings
■ Electro-optical Characteristics
1 For 5s or less
2 The condition and arrangement of the refl ective object are shown below.
3 Without refl ective object.
Output
Output Collector dark current
∗ 1
Transfer
teristics
charac-
Input
Input
The rank splitting of collector current (I
Total power dissipation
Operating temperature
Storage temperature
Soldering temperature
● Test Conditon and Arrangement for Collector Current
Rank
A
B
C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Forward voltage
Reverse current
∗ 2
∗ 3
Collector Current
Response time
Leak current
Collector current, I
(I
F
Parameter
= 4mA, V
58 to 120
Parameter
20 to 42
34 to 71
CE
= 2V)
C
[ μ A]
Al evaporation
d=1mm glass plate
C
Rise time
Fall time
) shall be executed according to the table below.
Package sleeve color
Transparent
Yellow
Green
Symbol
V
V
T
T
T
P
V
P
I
I
P
CEO
ECO
opr
tot
stg
sol
F
C
C
R
Symbol
I
I
LEAK
V
CEO
I
I
t
t
R
C
r
f
− 40 to + 100
F
− 25 to + 85
Rating
100
260
50
75
35
20
75
6
6
(T
4
V
a
I
R
I
= 25˚C)
Unit
mW
mW
mW
CE
mA
mA
F
F
˚C
˚C
˚C
V
V
V
= 4mA, V
L
= 4mA, V
= 2V, I
= 1k Ω , d = 1mm
Condition
V
I
F
V
= 20mA
CE
R
= 20V
= 6V
C
= 100 μ A,
CE
CE
= 2V
= 2V
Soldering area
MIN.
20
GP2S24J0000F Series
TYP.
1.2
45
20
20
1
Sheet No.: D3-A01801EN
MAX.
100
120
100
100
100
1.4
10
(T
a
= 25˚C)
Unit
μ A
μ A
nA
nA
μ s
V

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