GP2S24AB Sharp Electronics, GP2S24AB Datasheet - Page 9

• Manufacturer Part Number: GP2S24AB
• Manufacturer: Sharp Electronics
• Type: Reflectiver

Specifications of GP2S24AB

• Number Of Elements: 1
• Output Device: Phototransistor
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Package Type: PDIP
• Collector Current (dc) (max): 20mA
• Power Dissipation: 100mW
• Fall Time: 100000ns
• Rise Time: 100000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Not Compliant

■ Design Considerations
● Design guide
● Degradation
● Parts
• Photodetector (qty. : 1)
• Photo emitter (qty. : 1)
• Material
Phototransister
1) Prevention of detection error
2) Distance characteristic
This product is not designed against irradiation and incorporates non-coherent IRED.
In general, the emission of the IRED used in photointerrupter will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
This product is assembled using the below parts.
Infrared emitting diode
Black polyphernylene
Category
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
Please refer to Fig.10 (Relative collector current vs. Distance) to set the distance of the photointerrupter
and the object.
(non-coherent)
Category
Case
Silicon (Si)
Material
Gallium arsenide (GaAs)
Maximum Sensitivity
Material
Lead frame
42Alloy
wavelength (nm)
930
9
Maximum light emitting
wavelength (nm)
Lead frame plating
wavelength (nm)
SnCu plating
700 to 1 200
950
Sensitivity
GP2S24J0000F Series
I/O Frequency (MHz)
Response time (μs)
Sheet No.: D3-A01801EN
0.3
20