MT48H4M16LFB4-75 Micron Technology Inc, MT48H4M16LFB4-75 Datasheet - Page 23

• Manufacturer Part Number: MT48H4M16LFB4-75
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-75

• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 12:
Figure 13:
PDF: 09005aef8237ed98, Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. B 10/06 EN
READ-to-WRITE
READ-to-WRITE with Extra Clock Cycle
Note:
Note:
In the case of a fixed-length burst being executed to completion, a PRECHARGE
command issued at the optimum time (as described above) provides the same operation
that would result from the same fixed-length burst with auto precharge. The disadvan-
tage of the PRECHARGE command is that it requires that the command and address
buses be available at the appropriate time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate fixed-length bursts.
COMMAND
COMMAND
ADDRESS
ADDRESS
A CAS latency of three is used for illustration. The READ command may be issued to any
bank, and the WRITE command may be issued to any bank. If a burst of one is used, then
DQM is not required.
A CAS latency of three is used for illustration. The READ command may be issued to any
bank, and the WRITE command may be issued to any bank.
DQM
DQM
CLK
CLK
DQ
DQ
BANK,
COL n
T0
BANK,
T0
COL n
READ
READ
T1
T1
NOP
NOP
T2
T2
NOP
NOP
23
T3
T3
NOP
NOP
D
OUT
t HZ
t HZ
D
t CK
OUT
n
n
DON’T CARE
T4
BANK,
T4
COL b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE
NOP
D
IN
b
t
DS
64Mb: 4 Meg x 16 Mobile SDRAM
DON’T CARE
T5
BANK,
COL b
WRITE
D
IN
b
t
DS
©2006 Micron Technology, Inc. All rights reserved.