MT48H4M16LFB4-75 Micron Technology Inc, MT48H4M16LFB4-75 Datasheet - Page 52

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MT48H4M16LFB4-75

Manufacturer Part Number
MT48H4M16LFB4-75
Description
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48H4M16LFB4-75

Organization
4Mx16
Density
64Mb
Address Bus
14b
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
50mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant

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171
Figure 37:
PDF: 09005aef8237ed98, Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. B 10/06 EN
COMMAND
A0-A9, A11
BA0, BA1
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
READ – Without Auto Precharge
ROW
ROW
BANK
T0
t CMH
t CKH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
NOP
1. For this example, the burst length = 4, the CAS latency = 2, and the READ burst is followed
2. A9 and A11 = “Don’t Care.”
DISABLE AUTO PRECHARGE
by a “manual” PRECHARGE.
t CMS
t CL
COLUMN m
BANK
T2
READ
t CMH
t CH
CAS Latency
2
T3
NOP
t LZ
t AC
T4
D
NOP
OUT
t OH
52
t AC
m
D
T5
OUT
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t OH
m +1
t AC
64Mb: 4 Meg x 16 Mobile SDRAM
SINGLE BANKS
ALL BANKS
PRECHARGE
BANK(S)
D
T6
OUT
t OH
m +2
t RP
t AC
D
T7
NOP
OUT
t OH
m +3
t HZ
©2006 Micron Technology, Inc. All rights reserved.
BANK
ROW
ACTIVE
ROW
T8
UNDEFINED
DON’T CARE

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