BUK7Y10-30B NXP Semiconductors, BUK7Y10-30B Datasheet - Page 5

• Manufacturer Part Number: BUK7Y10-30B
• Description: MOSFET, N CH, 30V, 67A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7Y10-30B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 67A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0078ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7Y10-30B
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
(K/W)
th (j-mb)
I
D
10
10
10
(A)
10
10
10
10
-1
-1
-2
3
2
1
1
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
-1
-6
0.05
0.02
Thermal characteristics
0.2
δ = 0.5
0.1
Parameter
thermal resistance
from junction to
mounting base
single shot
10
Limit R
-5
DSon
= V
1
DS
/ I
D
Conditions
see
All information provided in this document is subject to legal disclaimers.
10
-4
Figure 5
DC
Rev. 03 — 9 April 2010
10
10
-3
N-channel TrenchMOS standard level FET
10
100 μs
1 ms
10 ms
100 ms
t
p
-2
= 10 μs
10
2
BUK7Y10-30B
Min
-
10
P
-1
V
DS
t
Typ
-
p
(V)
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aad628
003aac482
δ =
Max
1.76
t
T
p
t
10
1
3
Unit
K/W
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