BUK7Y10-30B NXP Semiconductors, BUK7Y10-30B Datasheet - Page 7

• Manufacturer Part Number: BUK7Y10-30B
• Description: MOSFET, N CH, 30V, 67A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7Y10-30B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 67A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0078ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes

NXP Semiconductors
BUK7Y10-30B
Product data sheet
Fig 6.
Fig 8.
(A)
I
(A)
D
I
D
70
56
42
28
14
60
40
20
0
0
function of drain-source voltage; typical values.
function of gate-source voltage; typical values.
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0
0
20V
10V
1
T
2
j
= 175 °C
2
4
3
25 °C
V
GS
6
(V) =
All information provided in this document is subject to legal disclaimers.
4
V
003aad622
003aad624
V
GS
DS
6.2V
(V)
5.9V
5.5V
5.1V
4.7V
(V)
5
8
Rev. 03 — 9 April 2010
Fig 7.
Fig 9.
R
(mΩ)
DSon
g
(S)
fs
100
20
15
10
75
50
25
5
0
0
of drain current; typical values.
drain current; typical values.
Drain-source on-state resistance as a function
Forward transconductance as a function of
0
0
N-channel TrenchMOS standard level FET
4.7V
15
5.1V
20
BUK7Y10-30B
V
30
GS
(V) =
40
5.5V
45
© NXP B.V. 2010. All rights reserved.
5.9V
003aad629
003aad623
I
I
D
D
(A)
(A)
6.2V
10V
20V
60
60
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