BUK7Y10-30B NXP Semiconductors, BUK7Y10-30B Datasheet - Page 9

• Manufacturer Part Number: BUK7Y10-30B
• Description: MOSFET, N CH, 30V, 67A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7Y10-30B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 67A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0078ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes

NXP Semiconductors
BUK7Y10-30B
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
(V)
GS
10
8
6
4
2
0
charge; typical values.
0
V
5
DS
= 14V
10
(A)
I
S
60
40
20
15
V
0
0.2
DS
All information provided in this document is subject to legal disclaimers.
Q
003aad626
= 24V
G
(nC)
20
0.4
Rev. 03 — 9 April 2010
T
j
= 175 °C
0.6
Fig 15. Input, output and reverse transfer capacitances
(pF)
25 °C
C
10
10
10
10
0.8
4
3
2
10
as a function of drain-source voltage; typical
values.
-1
N-channel TrenchMOS standard level FET
V
003aad625
S D
(V)
1
1
BUK7Y10-30B
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aad627
C
C
C
(V)
iss
oss
rss
10
2
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