PTFB193404F V1 Infineon Technologies, PTFB193404F V1 Datasheet

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PTFB193404F V1

Manufacturer Part Number
PTFB193404F V1
Description
RF MOSFET Power RF LDMOS FETs 340W 30V 1930-1990 MHz
Manufacturer
Infineon Technologies
Datasheet

Specifications of PTFB193404F V1

Lead Free Status / Rohs Status
No
Other names
FB193404FV1NP
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
340 W, 30 V, 1930 – 1990 MHz
Description
The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-
standard cellular power amplifi er applications in the 1930 to 1990 MHz
frequency band. Features include input and output matching, high gain
and thermally-enhanced package with earless fl ange. Manufactured
with Infi neon’s advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
RF Characteristics
Two-carrier WCDMA Measurements
V
peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
Data Sheet
ESD: Electrostatic discharge sensitive device—observe handling precautions!
DD
= 30 V, I
-20
-25
-30
-35
-40
-45
-50
-55
-60
– DRAFT ONLY
36
DQ
Two-carrier WCDMA 3GPP Drive-up
10 MHz carrier spacing, BW = 3.84 MHz
= 2.6 A, P
V
38
3GPP WCDMA signal, PAR = 8 dB,
IMD Low
DD
Average Output Power (dBm)
= 30 V, I
CASE
40
OUT
= 25°C unless otherwise indicated
42
DQ
= 80 W average, ƒ = 1990 MHz, 5 MHz spacing, 3GPP signal, channel bandwidth = 3.84 MHz,
= 2.6 A, ƒ = 1990 MHz,
IMD Up
44
Efficiency
46
(tested in Infi neon test fi xture)
48
ACPR
50
52
40
35
30
25
20
15
10
5
0
1 of 13
Symbol
ACPR
G
η
PTFB193404F
Package H-37275-6/2
Features
ps
D
Broadband internal matching
Wide video bandwidth
Typical single-carrier WCDMA performance,
1990 MHz, 30 V
- Output power = 125 W
- Effi ciency = 31%
- Gain = 17 dB
- PAR = 5.5 dB @ 0.01% CCDF
- ACPR @ 5 MHz = –35 dBc
Increased negative gate-source voltage range
for improved performance in Doherty amplifi ers
Capable of handling 10:1 VSWR @ 30 V, 340 W
(CW) output power
Integrated ESD protection
Excellent thermal stability
Pb-free and RoHS compliant
Min
17.5
28.5
Typ
–31
19
30
PTFB193404F
Rev. 04, 2011-02-07
Max
–29
Unit
dBc
dB
%

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PTFB193404F V1 Summary of contents

Page 1

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi- standard cellular power amplifi er applications in the 1930 ...

Page 2

Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-carrier WCDMA Characteristics 2 average, ƒ OUT peak/average = 7 0.01% CCDF Characteristic Gain Drain Efficiency Intermodulation Distortion ...

Page 3

... Confidential, Limited Internal Distribution Ordering Information Type and Version Package Outline PTFB193404F V1 H-37275-6/2 PTFB193404F V1 R250 H-37275-6/2 Typical Performance (data taken in production test fi xture) Two-carrier WCDMA 3GPP Drive- 2 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing 3.84 MHz -25 IM3 Low -30 IM3 Up -35 ...

Page 4

Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Broadband Performance 2 OUT Efficiency 30 20 Gain 10 1840 1900 1960 Frequency (MHz) Two-tone Drive- ...

Page 5

Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Drive-up at Selected Frequencies 2.6 A, tone spacing = 1 MHz DD DQ -20 -30 -40 -50 -60 - Output ...

Page 6

Confidential, Limited Internal Distribution Typical Performance (cont.) Single-carrier WCDMA Drive- 2.6 A, ƒ = 1990 MHz 3GPP WCDMA s ignal, PAR = 7.5 dB 3.84 MHz 26 Gain 22 18 ...

Page 7

Confidential, Limited Internal Distribution Broadband Circuit Impedance Z Source Ω Frequency MHz R jX 1900 1.21 –3.60 1930 1.21 –3.53 1960 1.20 –3.47 1990 1.20 –3.41 2020 1.19 –3.35 See next page for circuit information Data Sheet – DRAFT ONLY ...

Page 8

Confidential, Limited Internal Distribution Reference Circuit C804 10000000 pF R801 R803 100 Ohm 10 Ohm TL102 TL101 TL116 TL117 TL122 C104 10000000 pF C107 1.5 pF TL121 TL110 PORT ...

Page 9

Confidential, Limited Internal Distribution Reference Circuit (cont.) C213 C212 10000000 pF 10000000 pF TL224 TL225 3 3 Drain (Pin V1) C205 18 pF TL210 TL227 Drain DUT (Pin D1) C204 18 pF TL209 TL205 ...

Page 10

Confidential, Limited Internal Distribution Reference Circuit (cont.) Transmission Electrical Line Characteristics Input (cont.) 0.013 λ, 47.12 Ω TL114 0.122 λ, 7.29 Ω TL115 0.068 λ, 47.12 Ω TL116 0.032 λ, 47.12 Ω TL117 0.024 λ, 47.12 Ω TL118 0.017 λ, ...

Page 11

Confidential, Limited Internal Distribution Reference Circuit (cont.) RO4350, .020 .020 (60 C803 R802 C802 C104 R803 R801 S1 S3 C801 C102 L101 R103 C104 C107 C106 RF_IN C105 C103 L102 R104 C101 PTFB193404_IN_01 Reference circuit assembly diagram (not ...

Page 12

Confidential, Limited Internal Distribution Pinout Diagram Package H-37275-6 See next page for package outline specifi cations Data Sheet – DRAFT ONLY -37275-6-2_pd_07-22-2010 one PTFB193404F Pin Description V1 V device ...

Page 13

Confidential, Limited Internal Distribution Package Outline Specifi cations 2X 45° X 1.19 [45° X .047 30° D1 9.398 [.370] +.381 4X R0.508 -.127 [ ] R.020 +.015 -.005 2.134 [.084] SPH 1.626 [0.064] Diagram Notes—unless otherwise specifi ed: ...

Page 14

... PTFB193404F V1 Confi dential, Limited Internal Distribution Revision History: 2011-01-24 Previous Version: 2010-12-16, Data Sheet Page Subjects (major changes since last revision tables revised for clarity. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document ...

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