PTFB193404F V1 Infineon Technologies, PTFB193404F V1 Datasheet - Page 4

• Manufacturer Part Number: PTFB193404F V1
• Description: RF MOSFET Power RF LDMOS FETs 340W 30V 1930-1990 MHz
• Manufacturer: Infineon Technologies

Specifications of PTFB193404F V1

• Lead Free Status / Rohs Status: No
• Other names: FB193404FV1NP

Confidential, Limited Internal Distribution
Typical Performance
Data Sheet
60
50
40
30
20
10
20
19
18
17
16
15
1840
40
Two-tone Broadband Performance
Gain
– DRAFT ONLY
V
DD
Efficiency
Gain
= 30 V, I
ƒ
1900
1
Output Power, PEP (dBm)
44
= 1989 MHz, ƒ
V
Two-tone Drive-up
DD
Frequency (MHz)
DQ
= 30 V, I
= 2.6 A, P
1960
48
(cont.)
DQ
2
= 1990 MHz
= 2.6 A,
Efficiency
OUT
Return Loss
2020
= 52 dBm
52
IMD3
2080
56
0
-10
-20
-30
-40
-50
42
35
28
21
14
7
0
4 of 13 one
-25
-35
-45
-55
-65
21
20
19
18
17
16
39
39
Two-tone Drive-up (over temperature)
Gain
Efficiency
41
(P
3rd Order IMD
OUT
ƒ
ƒ
43
1
1
-max 3rd order IMD @ –30 dBc)
Output Power, PEP (dBm)
Output Power, PEP. (dBm)
= 1959 MHz, ƒ
= 1989 MHz, ƒ
V
V
Two-tone Drive-up
44
DD
DD
45
= 30 V, I
= 30 V, I
47
Efficiency
49
DQ
DQ
2
2
49
= 1960 MHz
= 1990 MHz
= 2.6 A,
= 2.6 A,,
51
PTFB193404F
53
Rev. 04, 2011-02-07
+25C
+85C
–30C
55
54
57
50
40
30
20
10
0
45
40
35
30
25
20
15
10
5
0