PTFB193404F V1 Infineon Technologies, PTFB193404F V1 Datasheet - Page 5

• Manufacturer Part Number: PTFB193404F V1
• Description: RF MOSFET Power RF LDMOS FETs 340W 30V 1930-1990 MHz
• Manufacturer: Infineon Technologies

Specifications of PTFB193404F V1

• Lead Free Status / Rohs Status: No
• Other names: FB193404FV1NP

Confidential, Limited Internal Distribution
Typical Performance
Data Sheet
-20
-30
-40
-50
-60
-70
-10
-20
-30
-40
-50
-60
-70
39
V
1
DD
IMD3
IMD7
IMD5
– DRAFT ONLY
= 30 V, I
41
ƒ = 1930 MHz, P
at Selected Frequencies
Intermodulation Distortion
43
Output Power, PEP (dBm)
Two Tone Spacing (MHz)
Two-tone Drive-up
DQ
V
vs. Tone Spacing
DD
45
= 2.6 A, tone spacing = 1 MHz
= 30 V, I
47
OUT
10
(cont.)
49
DQ
= 317 W (PEP)
= 2.6 A,
51
1990 MHz
1960 MHz
1930 MHz
53
IMD Lower
IMD Upper
55
100
57
5 of 13 two
-20
-30
-40
-50
-60
-15
-25
-35
-45
-55
-65
-75
36
39
43% clipping, PAR = 7.5 dB, 3.84 MHz BW
3GPP WCDMA signal, TM1 w/16 DPCH,
ACPR Up
41
Single-carrier WCDMA Drive-up
V
38
DD
Intermodulation Distortion
ƒ
= 30 V, I
43
Average Output Power (dBm)
1
Output Power, PEP (dBm)
40
= 1989 MHz, ƒ
V
vs. Output Power
DD
45
42
= 30 V, I
DQ
47
= 2.6 A, ƒ = 1990 MHz,
44
Efficiency
49
DQ
2
= 1990 MHz
46
= 2.6 A,
51
ACPR Low
PTFB193404F
48
Rev. 04, 2011-02-07
53
3rd Order
50
55
5th
7th
57
52
40
35
30
25
20
15
10
5
0