BUK9520-55 NXP Semiconductors, BUK9520-55 Datasheet - Page 3

• Manufacturer Part Number: BUK9520-55
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9520-55

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 52 A
• Power Dissipation: 116 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK9520-55,127

Philips Semiconductors
AVALANCHE LIMITING VALUE
April 1998
TrenchMOS
Logic level FET
SYMBOL PARAMETER
W
DSS
ID% = 100 I
120
110
100
Fig.2. Normalised continuous drain current.
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
Drain-source non-repetitive
unclamped inductive turn-off
energy
20
PD% = 100 P
20
D
/I
40
40
D 25 ˚C
transistor
60
60
= f(T
80
80
Tmb / C
Tmb / C
D
mb
/P
); conditions: V
D 25 ˚C
Normalised Current Derating
100
100
Normalised Power Derating
120
120
= f(T
140
140
mb
)
160
160
GS
CONDITIONS
I
V
D
180
180
GS
5 V
= 45 A; V
= 5 V; R
3
DD
GS
= 50 ; T
25 V;
ID/A
1000
100
I
0.001
10
D
0.01
1
0.1
& I
10
1
Fig.3. Safe operating area. T
1
Fig.4. Transient thermal impedance.
Zth/(K/W)
DM
0.5
0.2
0.1
0.05
0.02
0
mb
RDS(ON) =VDS/ID
1E-06
Z
= f(V
= 25 ˚C
th j-mb
DS
= f(t); parameter D = t
); I
0.0001
DM
DC
MIN.
single pulse; parameter t
-
10
0.01
t/s
TYP.
P
D
-
Product specification
VDS/V
t
p
BUK9520-55
mb
T
1
MAX.
= 25 ˚C
p
D =
/T
110
T
t
p
t
Rev 1.100
10ms
tp =
1 us
10us
100 us
1 ms
100ms
100
UNIT
100
mJ
p