BUK9Y09-40B/C,115 NXP Semiconductors, BUK9Y09-40B/C,115 Datasheet - Page 2

• Manufacturer Part Number: BUK9Y09-40B/C,115
• Description: MOSFET N-CH 40V 75A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y09-40B/C,115

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 5V
• Input Capacitance (ciss) @ Vds: 2866pF @ 25V
• Power - Max: 105.3W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9Y09-40B
Product data sheet
Pin
1
2
3
4
mb
Type number
BUK9Y09-40B
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
source
source
source
gate
mounting base; connected to
drain
Table 1.
Package
Name
LFPAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge V
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
Simplified outline
SOT669 (LFPAK)
Conditions
I
R
T
V
D
…continued
j(init)
GS
DS
GS
= 75 A; V
1 2 3 4
= 5 V; I
= 32 V; see
= 50 Ω; V
= 25 °C; unclamped
mb
D
sup
= 25 A;
GS
≤ 40 V;
Figure 13
= 5 V;
N-channel TrenchMOS logic level FET
Graphic symbol
BUK9Y09-40B
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
11
Version
Max Unit
146
-
2 of 14
mJ
nC