BUK9Y09-40B/C,115 NXP Semiconductors, BUK9Y09-40B/C,115 Datasheet - Page 9

• Manufacturer Part Number: BUK9Y09-40B/C,115
• Description: MOSFET N-CH 40V 75A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y09-40B/C,115

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 5V
• Input Capacitance (ciss) @ Vds: 2866pF @ 25V
• Power - Max: 105.3W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
BUK9Y09-40B
Product data sheet
Fig 14. Input, output and reverse transfer capacitances
Fig 16. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
(pF)
10
10
10
C
4
3
2
10
as a function of drain-source voltage; typical
values.
-1
1
(A)
I
D
60
40
20
0
0
10
T
j
= 175 °C
1
V
All information provided in this document is subject to legal disclaimers.
DS
C
C
003aac867
iss
oss
C
(V)
rss
10
2
2
Rev. 04 — 7 April 2010
T
j
= 25 °C
3
003aac868
V
Fig 15. Reverse diode current as a function of reverse
GS
(V)
(A)
I
100
S
80
60
40
20
4
0
diode voltage; typical values.
0
N-channel TrenchMOS logic level FET
0.3
T
j
= 175 °C
BUK9Y09-40B
0.6
T
0.9
j
© NXP B.V. 2010. All rights reserved.
= 25 °C
003aac870
V
SD
(V)
1.2
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