BUK9Y09-40B/C,115 NXP Semiconductors, BUK9Y09-40B/C,115 Datasheet - Page 8

• Manufacturer Part Number: BUK9Y09-40B/C,115
• Description: MOSFET N-CH 40V 75A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y09-40B/C,115

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 5V
• Input Capacitance (ciss) @ Vds: 2866pF @ 25V
• Power - Max: 105.3W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
BUK9Y09-40B
Product data sheet
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
D
a
10
10
10
10
10
10
2.4
1.6
0.8
-1
-2
-3
-4
-5
-6
0
−60
gate-source voltage
factor as a function of junction temperature
0
0
min
1
60
typ
max
2
120
V
GS
All information provided in this document is subject to legal disclaimers.
003aad565
T
(V)
j
(°C)
03nb25
180
3
Rev. 04 — 7 April 2010
Fig 11. Drain-source on-state resistance as a function
Fig 13. Gate-source voltage as a function of turn-on
R
(mΩ)
DSon
V
(V)
12
10
GS
8
6
4
5
4
3
2
1
0
of gate-source voltage; typical values.
gate charge; typical values.
0
0
N-channel TrenchMOS logic level FET
4
10
V
DS
= 14V
BUK9Y09-40B
8
20
12
V
DS
© NXP B.V. 2010. All rights reserved.
Q
V
= 32V
003aac864
003aac869
GS
G
(nC)
(V)
16
30
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