BGY288 NXP Semiconductors, BGY288 Datasheet - Page 10

• Manufacturer Part Number: BGY288
• Manufacturer: NXP Semiconductors

Specifications of BGY288

• Mounting: Surface Mount
• Pin Count: 16
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Philips Semiconductors
Table 7:
Z
signals on P
f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; unless otherwise specified.
[1]
[2]
[3]
[4]
9397 750 14011
Preliminary data sheet
Symbol
P
CG
SSG
AM/AM
AM/PM
t
f
r
CL
S
, t
n
= Z
f
Condition to set V
Conditions for power variation: P
T
Conditions for power variation: P
T
Conditions for power variation: P
T
mb
mb
mb
L
= 50 ; V
= 15 C to 70 C; V
= 20 C to +90 C; V
= 25 C; V
Dynamic characteristics GSM850 and EGSM900 transmit mode
D(LB)
Parameter
noise power
conversion gain
small signal gain
AM/AM conversion
AM/PM conversion
maximum control slope
carrier rise and fall time
control loop bandwidth
stability
ruggedness
< 50 dBm; LB TX mode selected;
BAT
BAT
PC
= 3.6 V; V
= 3.6 V; V
: V
BAT
BAT
BAT
= 3.6 V; = 2 : 8; P
= 3.2 V to 4.2 V; V
STAB
= 3.2 V to 4.2 V; V
STAB
D(LB)
D(LB)
D(LB)
= 2.8 V
= 2.8 V; T
= 0 dBm to 4 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900;
= 0 dBm to 4 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900;
= 2 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900;
20 mV.
Conditions
RBW = 100 kHz;
f
f
f
f
P
f
CG = P
f
f
P
f
SSG = P
P
6.5 % AM modulation with
P
P
P
P
34 dBm to 5 dBm
P
phases; V
V
0
0
0
0
SS1
0
0
SS2
L(LB)
L(LB)
L(LB)
D(LB)
L(LB)
L(LB)
L(LB)
L(LB)
BAT
= 4 : 8; VSWR
STAB
= 897.5 MHz for EGSM900;
= 836.5 MHz for GSM850
= 915 MHz for EGSM900;
= 849 MHz for GSM850;
= 915 MHz for EGSM900;
= 849 MHz for GSM850;
D(LB)
f
f
f
f
f
f
mb
0
0
mod
mod
mod
STAB
+ 27.5 MHz; P
+ 37.5 MHz; P
= f
= f
= 3.2 V to 4.6 V; P
1805 MHz; P
= 25 C; = 1 : 8 to 4 : 8; t
= 6 dBm to 34 dBm;
= 6 dBm to 34 dBm;
= 6 dBm to 34 dBm;
= 6 dBm to 34 dBm
= 6 dBm to 34 dBm
= 5 dBm to 34 dBm or
= 2.8 V
Rev. 01 — 2 February 2005
= 1.5 dBm to 2.5 dBm;
= 2 dBm; T
= 67 kHz at RFI_LB
= 140 kHz at RFI_LB
= 271 kHz at RFI_LB
0
0
L(CON)
34 dBm; VSWR
= 2.8 V
+ 20 MHz; P
L(SS2)
BAT
20 MHz; P
= 3.2 V to 4.6 V
20 mV.
P
mb
P
20 mV.
SS1
SS2
L(LB)
8 : 1 through all phases
L(LB)
L(LB)
= 25 C; f = 897.5 MHz for EGSM900; f = 836.5 MHz for GSM850.
; see
SS1
SS2
; see
< 34 dBm
< 34 dBm
< 34 dBm
L(LB)
= 40 dBm;
= 40 dBm;
Figure 4
7 : 1 through all
Figure 4
Power amplifier with integrated control loop
34 dBm;
p
= 575 s to 2300 s; P
…continued
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
no degradation
D(LB)
Typ
-
-
-
-
-
5
8
14
2
-
-
200
-
= 2 dBm; spurious
BGY288
Max
28
31
8
13
20
4
200
2
-
73
82
77
36
Unit
dBm
dBm
dBm
dB
dB
%
%
%
deg/dB
dB/V
kHz
dBm
10 of 22
s