SI3442DV-T1 Vishay, SI3442DV-T1 Datasheet

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SI3442DV-T1

Manufacturer Part Number
SI3442DV-T1
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of SI3442DV-T1

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.07Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Continuous Drain Current
4A
Power Dissipation
2W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
TSOP
Lead Free Status / Rohs Status
Not Compliant

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Part Number
Manufacturer
Quantity
Price
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Manufacturer:
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Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70192
S-49525—Rev. C, 06-Oct-97
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board, t
3 mm
DS
20
20
(V)
Top View
1
2
3
TSOP-6
2.85 mm
0.095 @ V
J
J
a
a
0.07 @ V
= 150 C)
= 150 C)
a
6
5
4
r
DS(on)
Parameter
Parameter
GS
GS
a
a
5 sec.
= 4.5 V
N-Channel 2.5-V (G-S) MOSFET
( )
= 2.5 V
a
(3) G
N-Channel MOSFET
I
D
(A)
4.0
3.4
(1, 2, 5, 6) D
T
T
T
T
(4) S
A
A
A
A
= 25 C
= 70 C
= 25 C
= 70 C
Symbol
Symbol
T
R
J
V
V
I
P
P
DM
, T
I
I
I
thJA
DS
GS
D
D
S
D
D
stg
www.vishay.com FaxBack 408-970-5600
–55 to 150
Limit
Limit
1.28
62.5
Vishay Siliconix
2.0
4.0
3.1
1.6
20
20
8
Si3442DV
Unit
Unit
C/W
W
W
V
V
A
A
A
C
2-1

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SI3442DV-T1 Summary of contents

Page 1

... For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70192 S-49525—Rev. C, 06-Oct-97 I (A) D 4.0 3.4 ( (3) G (4) S N-Channel MOSFET Symbol stg Symbol R thJA Si3442DV Vishay Siliconix Limit Unit 4.0 3 1.6 2 1.28 –55 to 150 C Limit Unit C/W 62.5 www.vishay.com FaxBack 408-970-5600 2-1 ...

Page 2

... Si3442DV Vishay Siliconix Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...

Page 3

... 1200 1000 800 600 400 200 1.8 1.6 1.4 1.2 1.0 0.8 0 –50 Si3442DV Vishay Siliconix Transfer Characteristics T = – 125 C 0.5 1.0 1.5 2.0 2.5 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

Page 4

... Si3442DV Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.25 0.50 0.75 1.00 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.2 0.1 –0 250 A D –0.1 –0.2 –0.3 –0.4 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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