SI3442DV-T1 Vishay, SI3442DV-T1 Datasheet - Page 3

• Manufacturer Part Number: SI3442DV-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI3442DV-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.07Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 4A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: TSOP
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 70192
S-49525—Rev. C, 06-Oct-97
0.14
0.12
0.10
0.08
0.06
0.04
0.02
20
16
12
8
4
0
0
5
4
3
2
1
0
0
0
0
V
I
D
DS
= 4 A
On-Resistance vs. Drain Current
= 10 V
1
V
4
DS
2
Q
V
Output Characteristics
GS
g
– Drain-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
= 2.5 V
V
– Drain Current (A)
Gate Charge
GS
2
8
= 4.5, 4, 3.5, 3 V
4
2.5 V
12
3
1.5 V
V
2 V
GS
6
16
4
= 4.5 V
20
5
8
1200
1000
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
–50
0
0
C
On-Resistance vs. Junction Temperature
rss
V
–25
I
D
GS
0.5
= 4 A
V
V
= 4.5 V
4
DS
GS
Transfer Characteristics
0
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
C
T
oss
1.0
J
www.vishay.com FaxBack 408-970-5600
– Junction Temperature ( C)
Capacitance
25
C
8
iss
Vishay Siliconix
1.5
50
T
12
C
25 C
75
= –55 C
2.0
Si3442DV
100
16
2.5
125
125 C
150
3.0
20
2-3