SI3442DV-T1 Vishay, SI3442DV-T1 Datasheet - Page 2

• Manufacturer Part Number: SI3442DV-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI3442DV-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.07Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 4A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: TSOP
• Lead Free Status / Rohs Status: Not Compliant

Si3442DV
Vishay Siliconix
Notes
a.
b.
www.vishay.com FaxBack 408-970-5600
2-2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
a
300 s, duty cycle
a
a
2%.
Symbol
V
r
r
I
I
DS(
DS(on)
t
t
I
I
I
GS(th)
D(on)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
)
V
V
V
I
I
DS
D
DS
I
= 10 V, V
F
= 20 V, V
V
V
V
V
V
1 A V
1 A, V
V
V
10 V V
V
V
= 1.6 A, di/dt = 100 A/ s
I
V
Test Condition
DS
GS
DS
DS
GS
S
DS
DS
DD
DD
DS
= 1.6 A, V
= V
= 5 V, V
= 5 V, V
= 4.5 V, I
= 2.5 V, I
= 20 V, V
= 10 V, I
= 10 V, R
= 0 V, V
GEN
10 V R
GS
GS
GS
, I
= 4.5 V, R
= 4.5 V, I
,
= 0 V, T
D
GS
GS
4 5 V R
4 5 V I
GS
GS
D
D
GS
D
= 250 A
L
L
= 3.4 A
= 4.0 A
= 4.5 V
= 2.5 V
= 10
= 4.0 A
= 0 V
=
= 0 V
10
J
D
G
8 V
= 70 C
= 4.0 A
= 6
4 0 A
6
Min
0.6
10
4
0.058
0.072
Typ
11.3
0.75
7.0
1.1
2.0
24
35
10
40
8
S-49525—Rev. C, 06-Oct-97
Document Number: 70192
Max
0.095
0.07
1.2
10
20
40
60
20
70
100
1
5
Unit
nA
nC
ns
V
A
A
S
V
A
A
C