BF1009SE6327XT Infineon Technologies, BF1009SE6327XT Datasheet

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Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stage GHz Operating voltage 9 V Integrated biasing network Pb-free (RoHS compliant) package Qualified according AEC Q101 G2 AGC G1 RF Input GND ESD (Electrostatic discharge) ...

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Thermal Resistance Parameter 1) Channel - soldering point BF1009S, BF1009SR Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage I = 500 µ G1S G2S Gate1-source breakdown voltage + mA, ...

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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Forward transconductance G2S Gate1 input capacitance MHz DS G2S ...

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Total power dissipation P BF1009S, BF1009SR 220 mW 180 160 140 120 100 Insertion power gain |S |² 200 MHz 21 G2S 15 dB ...

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Gate 1 input capacitance 200 MHz 3 pF 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0 Output capacitance C g1ss g2s f = 200 MHz ...

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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 0.25 B ...

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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143R 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 1.7 0.2 ...

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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...