BF1009SE6327XT Infineon Technologies, BF1009SE6327XT Datasheet - Page 3

• Manufacturer Part Number: BF1009SE6327XT
• Manufacturer: Infineon Technologies

Specifications of BF1009SE6327XT

• Channel Type: N
• Continuous Drain Current: 0.025A
• Drain Source Voltage (max): 12V
• Power Gain (typ)@vds: 22@9VdB
• Noise Figure (max): 2.1dB
• Frequency (max): 1GHz
• Package Type: SOT-143
• Pin Count: 3 +Tab
• Forward Transconductance (typ): 0.3S
• Input Capacitance (typ)@vds: 2.1@9V@Gate 1pF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics at T
Parameter
AC Characteristics
Forward transconductance
V
Gate1 input capacitance
V
Output capacitance
V
Power gain (self biased)
V
Noise figure
V
Gain control range
V
DS
DS
DS
DS
DS
DS
= 9 V, V
= 9 V, V
= 9 V, V
= 9 V, V
= 9 V, V
= 9 V, V
G2S
G2S
G2S
G2S
G2S
G2S
= 6 V
= 6 V, f = 10 MHz
= 6 V, f = 10 MHz
= 6 V, f = 800 MHz
= 6 V, f = 800 MHz
= 6 ... 0 V, f = 800 MHz
(verified by random sampling)
A
= 25°C, unless otherwise specified
3
Symbol
g
C
C
G
F
fs
G
g1ss
dss
p
p
min.
26
18
40
-
-
-
Values
typ.
2.1
0.9
1.4
30
22
50
BF1009S...
max.
2.7
2.1
2007-04-20
-
-
-
-
Unit
mS
pF
dB
dB