BF1009SE6327XT Infineon Technologies, BF1009SE6327XT Datasheet - Page 2

• Manufacturer Part Number: BF1009SE6327XT
• Manufacturer: Infineon Technologies

Specifications of BF1009SE6327XT

• Channel Type: N
• Continuous Drain Current: 0.025A
• Drain Source Voltage (max): 12V
• Power Gain (typ)@vds: 22@9VdB
• Noise Figure (max): 2.1dB
• Frequency (max): 1GHz
• Package Type: SOT-143
• Pin Count: 3 +Tab
• Forward Transconductance (typ): 0.3S
• Input Capacitance (typ)@vds: 2.1@9V@Gate 1pF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

Thermal Resistance
Parameter
Channel - soldering point
BF1009S, BF1009SR
Electrical Characteristics at T
Parameter
DC Characteristics
Drain-source breakdown voltage
I
Gate1-source breakdown voltage
+ I
Gate2 source breakdown voltage
Gate1-source leakage current
V
Gate 2 source leakage current
Drain current
V
Operating current (selfbiased)
V
Gate2-source pinch-off voltage
V
1
D
For calculation of R thJA please refer to Application Note Thermal Resistance
I
V
G1S
DS
DS
DS
G1S
G2S
= 500 µA, V
G2S
= 9 V, V
= 9 V, V
= 9 V, I
= 6 V, V
= 10 mA, V
= 10 mA, V
= 8 V, V
D
G1S
G2S
G2S
= 500 µA
G1S
G1S
= 0 , V
= 6 V
G1S
G2S
= 0
= 0 , V
= 0 , V
= 0 , V
= 0 , V
G2S
1)
G2S
DS
= 6 V
DS
DS
= 0
= 0
A
= 0
= 0
= 25°C, unless otherwise specified
2
Symbol
V
+ V
+ I
I
I
V
DSS
DSO
V
I
(BR)DS
G2S(p)
G1SS
G2SS
Symbol
R
(BR)G1SS
(BR)G2SS
thchs
min.
12
10
9
9
-
-
-
-
Values
Value
typ.
0.9
13
370
-
-
-
-
-
-
max.
BF1009S...
500
12
12
60
50
16
2007-04-20
-
-
Unit
V
µA
nA
µA
mA
V
Unit
K/W