B300D44A102XXG ON Semiconductor, B300D44A102XXG Datasheet - Page 5

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B300D44A102XXG

Manufacturer Part Number
B300D44A102XXG
Description
IC PROCESSOR AUDIO 24BIT 44DFN
Manufacturer
ON Semiconductor
Series
BelaSigna® 300r
Type
Audio Processorr
Datasheet

Specifications of B300D44A102XXG

Applications
Portable Equipment
Mounting Type
Surface Mount
Package / Case
44-VFDFN
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
B300D44A102XXG
B300D44A102XXGOSTR

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
B300D44A102XXG
Manufacturer:
ON Semiconductor
Quantity:
1 450
Part Number:
B300D44A102XXG
Manufacturer:
ON/安森美
Quantity:
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DIRECT DIGITAL OUTPUT
ANTI−ALIASING FILTERS (Input and Output)
LOW−SPEED A/D
DIGITAL PADS
Maximum load current
Output impedance
Output dynamic range
Output THD+N
Output voltage
Preamplifier filter cut−off
frequency
Digital anti−aliasing filter
cut−off frequency
Passband flatness
Input stopband attenuation
Input voltage
INL
DNL
Maximum variation over tem-
perature (0°C to 50°C)
Sampling frequency
Channel sampling frequency
Voltage level for high input
Voltage level for low input
Voltage level for high output
Voltage level for low output
Input capacitance for digital
pads
Pull−up resistance for digital
input pads
Pull−down resistance for
digital input pads
Sample rate tolerance
Rise and fall time
ESD
Latch−up
Table 2. ELECTRICAL SPECIFICATIONS
4. DFN Package option can have higher input−referred noise up to 2 mV worse than the WLCSP. WLCSP specifications listed.
5. CDM only applies to the DFN package.
Description
R
DO
DO
Symbol
R
DOWN_IN
DO
Tr, Tf
R
V
V
UP_IN
C
I
V
V
FS
DO
THDN
VOUT
DO
OH
OL
IH
IN
IL
DR
(continued)
Normal mode
Normal mode
Unweighted, 100 Hz to 8 kHz
BW, mono
Unweighted, 100 Hz to 22 kHz
BW, mono
Preamp not bypassed
60 kHz (12 kHz cut−off)
Peak input voltage
From GND to 2*VREG
From GND to 2*VREG
All channels sequentially
8 channels
2 mA source current
2 mA sink current
Sample rate of 16 kHz or 32 kHz
Digital output pad
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
(Note 5)
V < GNDC, V > VBAT
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Conditions
5
−V
VDDO
BATRCVR
VBAT
* 0.8
* 0.8
Min
220
220
92
−1
−1
0
12.8
Typ
−79
270
270
f
1.6
95
20
60
±0
s
4
4
/2
V
BATRCVR
VDDO
VBAT
* 0.2
* 0.2
Max
−76
320
320
200
500
200
5.5
2.0
50
10
+1
1
2
5
2
Units
LSB
LSB
LSB
kHz
kHz
kHz
mA
mA
kW
kW
dB
dB
dB
dB
pF
kV
%
W
V
V
V
V
V
V
V
V
Screened

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