PMEG2005CT NXP Semiconductors, PMEG2005CT Datasheet - Page 2

• Manufacturer Part Number: PMEG2005CT
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier incommon cathode configuration with an integrated guard ring for stress protection,encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plasticpackage
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PMEG2005CT
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number
PMEG2005CT
Type number
PMEG2005CT
Symbol
Per diode
V
I
I
I
F(AV)
FRM
FSM
R
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
Limiting values
anode (diode 1)
anode (diode 2)
common cathode
Description
Parameter
reverse voltage
average forward current
repetitive peak forward
current
non-repetitive peak
forward current
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 2 — 22 June 2010
Description
plastic surface-mounted package; 3 leads
500 mA low V
Conditions
T
square wave;
δ = 0.5;
f = 20 kHz
T
T
t
δ ≤ 0.25
square wave;
t
p
p
j
amb
sp
≤ 1 ms;
= 8 ms
= 25 °C
≤ 130 °C
≤ 100 °C
Marking code
P8*
F
Simplified outline
dual MEGA Schottky barrier rectifier
1
[1]
[1]
[2]
PMEG2005CT
3
Min
-
-
-
-
-
2
Graphic symbol
© NXP B.V. 2010. All rights reserved.
Max
20
0.5
0.5
3.9
10
1
Version
SOT23
3
006aaa438
Unit
V
A
A
A
A
2
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