PMEG2005CT NXP Semiconductors, PMEG2005CT Datasheet - Page 6

• Manufacturer Part Number: PMEG2005CT
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier incommon cathode configuration with an integrated guard ring for stress protection,encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plasticpackage
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMEG2005CT
Product data sheet
Fig 4.
Fig 6.
(A)
I
10
10
10
10
(1) T
(2) T
(3) T
(4) T
(5) T
F
10
−1
−2
−3
−4
1
0
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse voltage; typical values
j
j
j
j
j
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
(1)
(2)
amb
(3)
0.2
= 25 °C
(4)
(5)
(pF)
0.4
C
125
100
d
75
50
25
0
0
V
All information provided in this document is subject to legal disclaimers.
F
006aab536
(V)
0.6
Rev. 2 — 22 June 2010
5
10
500 mA low V
Fig 5.
(A)
I
10
10
10
10
10
10
10
10
(1) T
(2) T
(3) T
(4) T
R
−2
−3
−4
−5
−6
−7
−8
−9
15
0
Reverse current as a function of reverse
voltage; typical values
j
j
j
j
006aab538
V
= 125 °C
= 85 °C
= 25 °C
= −40 °C
R
(V)
F
dual MEGA Schottky barrier rectifier
20
5
(1)
(2)
(3)
(4)
PMEG2005CT
10
15
© NXP B.V. 2010. All rights reserved.
006aab537
V
R
(V)
20
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