PMEG2005CT NXP Semiconductors, PMEG2005CT Datasheet - Page 8

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier incommon cathode configuration with an integrated guard ring for stress protection,encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plasticpackage

PMEG2005CT

Manufacturer Part Number
PMEG2005CT
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier incommon cathode configuration with an integrated guard ring for stress protection,encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plasticpackage
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
8. Test information
PMEG2005CT
Product data sheet
Fig 11. Average forward current as a function of
Fig 13. Reverse recovery time test circuit and waveforms
I
F(AV)
(A)
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
V = V
(1) I
0.75
0.50
0.25
0.0
R
S
0
Ceramic PCB, Al
T
ambient temperature; typical values
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
R
R
= 50
j
+ I
= 150 °C
= 1 mA
(1)
(2)
(3)
(4)
F
Ω
×
25
R
S
50
2
O
75
3
, standard footprint
I
F
r
D.U.T.
100
= 0.35 ns
125
T
All information provided in this document is subject to legal disclaimers.
amb
OSCILLOSCOPE
r
006aab543
150
mga881
= 0.6 ns; reverse voltage pulse duration t
SAMPLING
R
(°C)
i
= 50
175
Rev. 2 — 22 June 2010
Ω
V
R
500 mA low V
Fig 12. Average forward current as a function of
t
10 %
r
I
F(AV)
(A)
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
0.75
0.50
0.25
90 %
0.0
input signal
0
T
solder point temperature; typical values
j
= 150 °C
t
(1)
(2)
(3)
(4)
p
25
F
p
dual MEGA Schottky barrier rectifier
= 100 ns; duty cycle δ = 0.05
50
75
t
PMEG2005CT
100
+ I
F
125
output signal
© NXP B.V. 2010. All rights reserved.
T
sp
006aab544
150
(°C)
t rr
175
(1)
t
8 of 14

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