PMEG3010BER NXP Semiconductors, PMEG3010BER Datasheet - Page 4

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD123W small and flatlead Surface-Mounted Device (SMD) plastic package

PMEG3010BER

Manufacturer Part Number
PMEG3010BER
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD123W small and flatlead Surface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
PMEG3010BER_1
Product data sheet
Fig 1.
Fig 2.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
1
1
3
2
1
10
3
2
1
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for cathode 1 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
3
3
duty cycle =
duty cycle =
0.25
0.02
0.25
0.02
0.5
0.1
0.5
0.1
1
0
1
0
0.75
0.33
0.05
0.01
0.2
0.75
0.33
0.05
0.01
0.2
10
10
2
2
10
10
1
1
2
Rev. 01 — 20 April 2009
1
1
1 A low V
10
10
F
MEGA Schottky barrier rectifier
PMEG3010BER
10
10
2
2
t
t
p
p
© NXP B.V. 2009. All rights reserved.
(s)
(s)
006aab362
006aab363
10
10
3
3
4 of 13

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