PMEG3010BER NXP Semiconductors, PMEG3010BER Datasheet - Page 7

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD123W small and flatlead Surface-Mounted Device (SMD) plastic package

PMEG3010BER

Manufacturer Part Number
PMEG3010BER
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD123W small and flatlead Surface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
PMEG3010BER_1
Product data sheet
Fig 7.
Fig 9.
P
I
F(AV)
F(AV)
(W)
(A)
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(4)
0.5
0.4
0.3
0.2
0.1
0.0
1.5
1.0
0.5
0.0
0.0
0
T
Average forward power dissipation as a
function of average forward current; typical
values
FR4 PCB, standard footprint
T
Average forward current as a function of
ambient temperature; typical values
j
j
= 0.1
= 0.2
= 0.5
= 1
= 1; DC
= 0.5; f = 20 kHz
= 0.2; f = 20 kHz
= 0.1; f = 20 kHz
= 150 C
= 150 C
25
(1)
(2)
(3)
(4)
50
(1)
0.5
75
(2)
100
1.0
(3)
125
I
F(AV)
T
amb
006aab441
006aab443
150
(A)
( C)
(4)
175
1.5
Rev. 01 — 20 April 2009
Fig 8.
Fig 10. Average forward current as a function of
P
I
F(AV)
R(AV)
(W)
(A)
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(4)
0.25
0.20
0.15
0.10
0.05
0.00
1.5
1.0
0.5
0.0
0
T
Average reverse power dissipation as a
function of reverse voltage; typical values
0
FR4 PCB, mounting pad for cathode 1 cm
T
ambient temperature; typical values
1 A low V
j
j
= 1
= 0.9
= 0.8
= 0.5
= 1; DC
= 0.5; f = 20 kHz
= 0.2; f = 20 kHz
= 0.1; f = 20 kHz
= 125 C
= 150 C
25
(1)
(2)
(3)
(4)
50
F
10
MEGA Schottky barrier rectifier
PMEG3010BER
(1)
(2)
(3)
75
100
20
125
© NXP B.V. 2009. All rights reserved.
T
V
amb
R
(4)
006aab442
006aab444
150
(V)
( C)
2
175
30
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