PMEG3010BER NXP Semiconductors, PMEG3010BER Datasheet - Page 9

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD123W small and flatlead Surface-Mounted Device (SMD) plastic package

PMEG3010BER

Manufacturer Part Number
PMEG3010BER
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD123W small and flatlead Surface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
8. Test information
9. Package outline
PMEG3010BER_1
Product data sheet
8.1 Quality information
The current ratings for the typical waveforms as shown in
calculated according to the equations:
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is
suitable for use in automotive applications.
I
RMS
Fig 13. Duty cycle definition
Fig 14. Package outline SOD123W
=
I
F AV
at DC, and
Dimensions in mm
3.7
3.3
Rev. 01 — 20 April 2009
I
2.8
2.4
RMS
P
=
I
1.05
0.75
M
1.9
1.5
t
1
I
F AV
1
2
t
2
with I
1 A low V
duty cycle =
=
I
RMS
M
006aaa812
defined as RMS current.
0.6
0.3
F
with I
MEGA Schottky barrier rectifier
t
t
t
PMEG3010BER
1
2
Figure
1.1
0.9
M
0.22
0.10
defined as peak current,
08-11-06
9, 10,
© NXP B.V. 2009. All rights reserved.
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and
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