PESD5V0S1UJ_PESD12VS1UJ NXP Semiconductors, PESD5V0S1UJ_PESD12VS1UJ Datasheet - Page 3

• Manufacturer Part Number: PESD5V0S1UJ_PESD12VS1UJ
• Description: Unidirectional ElectroStatic Discharge (ESD) protection diodes in a very smallSurface-Mounted Device (SMD) plastic package designed to protect one signal linefrom the damage caused by ESD and transient overvoltage
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PESD5V0S1UJ_PESD12VS1UJ_1
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Table 7.
T
[1]
Table 8.
Symbol
P
T
T
T
Symbol
V
Standard
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
amb
j
amb
stg
tot
ESD
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Soldering point of cathode tab.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Device stressed with ten non-repetitive ESD pulses.
= 25 C unless otherwise specified.
Parameter
electrostatic discharge voltage
Limiting values
ESD maximum ratings
ESD standards compliance
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Unidirectional ESD protection for transient voltage suppression
PESD5V0S1UJ; PESD12VS1UJ
Rev. 01 — 3 June 2009
…continued
Conditions
T
amb
Conditions
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883 (human
body model)
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
25 C
[3]
[4]
Min
-
-
-
55
65
[1]
Min
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
420
720
150
+150
+150
Max
30
400
16
Unit
mW
mW
2
C
C
C
.
Unit
kV
V
kV
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