PESD5V0S1UJ_PESD12VS1UJ NXP Semiconductors, PESD5V0S1UJ_PESD12VS1UJ Datasheet - Page 5

• Manufacturer Part Number: PESD5V0S1UJ_PESD12VS1UJ
• Description: Unidirectional ElectroStatic Discharge (ESD) protection diodes in a very smallSurface-Mounted Device (SMD) plastic package designed to protect one signal linefrom the damage caused by ESD and transient overvoltage
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
PESD5V0S1UJ_PESD12VS1UJ_1
Product data sheet
Table 10.
T
[1]
Symbol
V
I
V
C
V
r
RM
dif
amb
RWM
BR
CL
d
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
= 25 C unless otherwise specified.
Characteristics
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
differential resistance
PESD5V0S1UJ
PESD12VS1UJ
PESD5V0S1UJ
PESD12VS1UJ
PESD5V0S1UJ
PESD12VS1UJ
PESD5V0S1UJ
PESD12VS1UJ
PESD5V0S1UJ
PESD12VS1UJ
PESD5V0S1UJ
PESD12VS1UJ
Unidirectional ESD protection for transient voltage suppression
PESD5V0S1UJ; PESD12VS1UJ
Rev. 01 — 3 June 2009
Conditions
V
V
I
f = 1 MHz;
V
I
I
I
I
I
I
I
R
PP
PP
PP
PP
PP
PP
R
RWM
RWM
R
= 5 mA
= 5 mA
= 0 V
= 47 A
= 25 A
= 5 A
= 22.5 A
= 15 A
= 5 A
= 5 V
= 12 V
[1]
Min
-
-
-
-
6.2
13.3
-
-
-
-
-
-
-
-
-
-
Typ
-
-
0.3
< 1
6.8
14.5
480
160
-
-
-
-
-
-
2
5
© NXP B.V. 2009. All rights reserved.
Max
5
12
4
100
7.3
15.75
530
180
19
13.5
9.8
27
23.5
19
100
100
Unit
V
V
nA
V
V
pF
pF
V
V
V
V
V
V
A
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