PESD5V0S1UJ_PESD12VS1UJ NXP Semiconductors, PESD5V0S1UJ_PESD12VS1UJ Datasheet - Page 6

• Manufacturer Part Number: PESD5V0S1UJ_PESD12VS1UJ
• Description: Unidirectional ElectroStatic Discharge (ESD) protection diodes in a very smallSurface-Mounted Device (SMD) plastic package designed to protect one signal linefrom the damage caused by ESD and transient overvoltage
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PESD5V0S1UJ_PESD12VS1UJ_1
Product data sheet
Fig 3.
Fig 5.
P
(pF)
(W)
C
(1) PESD5V0S1UJ
(2) PESD12VS1UJ
(1) PESD5V0S1UJ
(2) PESD12VS1UJ
PP
500
400
300
200
100
10
10
10
10
d
0
4
3
2
1
10
0
T
Peak pulse power as a function of exponential
pulse duration; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
1
amb
= 25 C
amb
(1)
(2)
10
4
2
= 25 C
(1)
(2)
10
8
3
t
V
p
R
006aab414
006aab415
( s)
(V)
Unidirectional ESD protection for transient voltage suppression
10
12
PESD5V0S1UJ; PESD12VS1UJ
Rev. 01 — 3 June 2009
4
Fig 4.
Fig 6.
P
PP(25 C)
P
(nA)
I
PP
RM
10
(1) PESD5V0S1UJ
(2) PESD12VS1UJ
10
10
1.2
0.8
0.4
10
1
0
3
2
1
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
75
Reverse leakage current as a function of
ambient temperature; typical values
25
50
25
(1)
100
75
150
© NXP B.V. 2009. All rights reserved.
125
(2)
T
001aaa193
T
006aab416
amb
j
( C)
( C)
200
175
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