BUK9535-100A NXP Semiconductors, BUK9535-100A Datasheet - Page 2

• Manufacturer Part Number: BUK9535-100A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9535-100A
Product data sheet
Pin
1
2
3
mb
Type number
BUK9535-100A
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
Package
Name
TO-220AB
Symbol
Static characteristics
R
Avalanche ruggedness
E
DS(AL)S
DSon
Quick reference data
Parameter
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
Description
plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 February 2011
Simplified outline
SOT78A (TO-220AB)
Conditions
V
T
V
T
V
T
see
I
R
T
D
…continued
j
j
j
j(init)
GS
GS
GS
GS
= 25 °C
= 25 °C
= 25 °C; see
= 40 A; V
Figure 13
= 4.5 V; I
= 10 V; I
= 5 V; I
= 50 Ω; V
= 25 °C; unclamped
1 2
mb
3
D
sup
D
= 25 A;
D
GS
= 25 A;
≤ 100 V;
= 25 A;
Figure
= 5 V;
N-channel TrenchMOS logic level FET
12;
Graphic symbol
BUK9535-100A
mbb076
G
Min
-
-
-
-
© NXP B.V. 2011. All rights reserved.
D
S
Typ
-
29
30
-
Version
SOT78A
Max Unit
39
34
35
125
2 of 13
mΩ
mΩ
mΩ
mJ