BUK9535-100A NXP Semiconductors, BUK9535-100A Datasheet - Page 3

• Manufacturer Part Number: BUK9535-100A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK9535-100A
Product data sheet
Symbol
V
V
V
I
I
P
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
GSM
DS(AL)S
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
All information provided in this document is subject to legal disclaimers.
T
mb
03aa24
(°C)
200
Rev. 2 — 9 February 2011
Conditions
T
R
T
see
T
T
see
T
pulsed; t
T
pulsed; t
I
V
D
j
mb
mb
mb
mb
mb
GS
GS
≥ 25 °C; T
= 40 A; V
Figure 3
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 5 V; T
= 20 kΩ
p
p
≤ 50 µs
≤ 10 µs; T
sup
j(init)
j
Fig 2.
≤ 175 °C
GS
≤ 100 V; R
GS
= 25 °C; unclamped
P
Figure 2
(%)
= 5 V; see
der
120
= 5 V; see
80
40
mb
0
p
function of mounting base temperature
Normalized total power dissipation as a
0
= 25 °C
≤ 10 µs;
GS
Figure
= 50 Ω;
N-channel TrenchMOS logic level FET
Figure 1
50
1;
BUK9535-100A
100
Min
-
-
-10
-
-
-
-
-55
-55
-15
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
175
Max
100
100
10
41
29
165
149
15
41
165
125
03na19
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
V
A
A
mJ
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