BUK9535-100A NXP Semiconductors, BUK9535-100A Datasheet - Page 6

• Manufacturer Part Number: BUK9535-100A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9535-100A
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
10
I
10
10
10
10
10
D
D
160
120
80
40
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
1
min
4
typ
6
2
V
max
GS
V
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8
(V) = 10
GS
03aa36
V
DS
(V)
03nd11
(V)
10
Rev. 2 — 9 February 2011
3
5
4
3
2.2
Fig 6.
Fig 8.
R
(mΩ)
DSon
(S)
g
fs
35
30
25
20
70
60
50
40
30
20
10
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
2
0
N-channel TrenchMOS logic level FET
20
4
40
BUK9535-100A
6
60
8
© NXP B.V. 2011. All rights reserved.
80
V
GS
I
D
03nd10
03nd08
(V)
(A)
100
10
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