BUK9535-55A NXP Semiconductors, BUK9535-55A Datasheet - Page 2

• Manufacturer Part Number: BUK9535-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK9535-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK9535-55A
Symbol
V
V
V
I
I
P
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
GSM
DS(AL)S
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
gate
drain
source
mounting base; connected to drain
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Conditions
T
R
T
T
T
T
pulsed; t
T
pulsed; T
I
V
D
j
mb
mb
mb
mb
mb
GS
GS
Rev. 02 — 28 April 2011
≥ 25 °C; T
= 14 A; V
= 100 °C
= 25 °C
= 25 °C; pulsed
= 25 °C
= 25 °C
= 5 V; T
= 20 kΩ
p
Simplified outline
mb
≤ 50 µs
sup
= 25 °C
j(init)
j
≤ 175 °C
SOT78A (TO-220AB)
≤ 25 V; R
= 25 °C; unclamped
1 2
mb
GS
3
= 50 Ω;
N-channel TrenchMOS logic level FET
BUK9535-55A
Graphic symbol
Min
-
-
-10
-
-
-
-
-55
-55
-15
-
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
133
175
175
Version
SOT78A
Max
55
55
10
24
34
85
15
34
133
49
D
S
Unit
V
V
V
A
A
A
W
°C
°C
V
A
A
mJ
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