BUK9535-55A NXP Semiconductors, BUK9535-55A Datasheet - Page 8

• Manufacturer Part Number: BUK9535-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9535-55A
Product data sheet
Fig 15. Input, output and reverse transfer capacitances
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(nF)
C
3
2
1
0
10
as a function of drain-source voltage; typical
values
V
V
−2
C
C
C
GS
GS
iss
oss
rss
= 0 V; f = 1 MHz
= 0 V
10
−1
1
(A)
I
F
100
80
60
40
20
10
0
0
All information provided in this document is subject to legal disclaimers.
V
003aaf295
DS
(V)
10
0.5
Rev. 02 — 28 April 2011
2
T
j
= 150 °C
1.0
Fig 16. Gate-source voltage as a function of gate
T
j
V
(V)
= 25 °C
GS
1.5
6
4
2
0
charge; typical values
T
0
j
V
= 25 °C; I
SDS
003aaf298
(V)
N-channel TrenchMOS logic level FET
2.0
5
D
= 25 A
V
BUK9535-55A
DS
10
= 14 V
15
V
© NXP B.V. 2011. All rights reserved.
DS
Q
003aaf297
G
= 44 V
(nC)
20
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