BUK9535-55A NXP Semiconductors, BUK9535-55A Datasheet - Page 5

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9535-55A

Manufacturer Part Number
BUK9535-55A
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
BUK9535-55A
Manufacturer:
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Quantity:
6 000
Part Number:
BUK9535-55A
Manufacturer:
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Quantity:
30 000
NXP Semiconductors
6. Characteristics
Table 6.
BUK9535-55A
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
I
I
I
V
V
V
V
V
V
V
V
V
T
V
R
measured from contact screw on tab to
centre of die ; T
from drain lead 6 mm from package to
centre of die ; T
from source lead to source bond pad ;
T
I
I
I
V
D
D
D
D
D
S
S
S
j
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
DS
G(ext)
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 °C
= 25 °C
= 25 A; V
= 34 A; V
= 34 A; dI
= 55 V; V
= 55 V; V
= 10 V; V
= -10 V; V
= 4.5 V; I
= 10 V; I
= 5 V; I
= 5 V; I
= 0 V; V
= 30 V; R
= 30 V; T
= 10 Ω; T
Rev. 02 — 28 April 2011
D
D
GS
GS
S
DS
DS
DS
DS
D
/dt = -100 A/µs; V
D
= 25 A; T
= 25 A; T
j
GS
GS
DS
L
DS
= 25 °C
= 25 A; T
= 0 V; T
= 0 V; T
= V
= V
= V
= 25 A; T
= 1.2 Ω; V
= 25 V; f = 1 MHz;
GS
GS
j
j
j
= 25 °C
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
= 0 mV; T
= 0 mV; T
GS
GS
GS
; T
; T
; T
j
j
j
j
= 25 °C
= 25 °C
= 175 °C
= 25 °C
j
j
j
j
j
j
j
j
= -55 °C
= 25 °C
= 175 °C
= 25 °C
j
GS
= 25 °C
= 175 °C
= 25 °C
= 25 °C
= 25 °C
j
j
= 5 V;
= 25 °C
= -55 °C
GS
= -10 V;
N-channel TrenchMOS logic level FET
BUK9535-55A
Min
55
50
-
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.5
-
0.05
-
2
2
26.5
24
-
26
880
165
111
6
36
96
73
3.5
4.5
7.5
0.85
1.1
36
0.07
© NXP B.V. 2011. All rights reserved.
198
Max
-
-
2.3
2
-
10
500
100
100
38
32
70
35
1173
152
9
55
134
102
-
-
-
1.2
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
V
ns
µC
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